Short Description
Inductively Coupled Plasma RIE (ICP-RIE) is an etch technology often used in specialty semiconductor markets for device manufacturing.
This technology can combine both chemical reactions and ion-induced etching. The independent control of ion flux enables high process flexibility.
Gasses: BCl3, Cl2, SF6, CHF3, C4F8, O2, Ar
Vacuum load lock
Showerhead gas inlet optimized for RIE
High conductance vacuum layout
PC 2000 Control
ICP source 1200 W at 13.56 MHz
Substrate electrode temperature range: -30 - + 80 °C
Contact Person
Dr. Salvatore Bagiante
Research Services
Dry etching and sample preparation
Methods & Expertise for Research Infrastructure
Micro- and nanofabrication processing, development of new processes, characterization, training
Allocation to research infrastructure
Information on terms of use, cooperation and fees is provided upon request. All such information is defined in a scientific collaboration agreement.