Short Description
Atomic Layer Deposition (ALD) is an advanced deposition technique that allows for ultra-thin films to be deposited in a precisely controlled way. Not only does ALD provide excellent thickness control and uniformity but 3D structures can be covered with a conformal coating for high-aspect-ratio structures.
ALD relies on self-limiting surface reactions, which can benefit a wide range of applications. The usage of plasma allows for improved film properties, control thereof and a wide range of possible materials. The flexibility of unique surface pre-treatments allows for low damage processing.
In addition to the benefits of thermal ALD, PE-ALD allows for a wider choice of precursor chemistry with enhanced film quality:
- Plasma enables low-temperature ALD processes and the remote source maintains low plasma damage
- Eliminates the need for water as a precursor, reducing purge times between ALD cycles, especially for low temperatures
- Higher quality films through improved removal of impurities, leading to lower resistivity, higher density, etc
- Effective metal chemistry through use of hydrogen plasma
- Ability to control stoichiometry/phase
- Reduced nucleation delay
- Plasma surface treatment
Contact Person
Univ.-Prof. Dr. Alberta Bonanni
Research Services
The plasma enhanced plasma atomic deposition system allows growing (epitaxial) heterostritures in a highly controlled way. This system is dedicated to the fabrication of III-nitrides, (nitride-) superconductors and 2D (van der Waals) materials. The system is hosted in a clean-room environment and both a comprehensive characterization (structural, electrical, optical, magnetic, …) of the layers their structuring (lithography, metallization, etching) are possible on-site.
Methods & Expertise for Research Infrastructure
The plasma enhanced plasma atomic deposition system allows growing (epitaxial) heterostritures in a highly controlled way. This system is dedicated to the fabrication of III-nitrides, (nitride-) superconductors and 2D (van der Waals) materials. The system is hosted in a clean-room environment and both a comprehensive characterization (structural, electrical, optical, magnetic, …) of the layers their structuring (lithography, metallization, etching) are possible on-site.