Short Description
The optical infrared setup (OIS) enables to measure the optical response of semiconductor materials, as well as micro- and nanomaterials, by means of optical spectroscopy. The addressable wavelength range of the OIS extends from around 700 nm to the Telecom wavelengths of around 1650 nm and the setup enables a variable sample temperature from 4.2 Kelvin to 500 Kelvin. The core of the OIS consists of an excitation path (laser, 440 nm), a cryostat and a detection path. The excitation laser light is focused on a sample by means of an objective. The emitted light is directed via a grating spectrometer to an InGaAs line detector, which is operated at about -80°C.
Contact Person
Moritz Brehm
Research Services
Photoluminescence measurements of telecom light emitters.
In case of interest, please contact: moritz.brehm@jku.at first
Methods & Expertise for Research Infrastructure
With the help of the optical infrared setup, mainly semiconductors and semiconductor nanostructures are examined with regard to their light-emission properties (photoluminescence and electroluminescence). The existing expertise of the supervisors of the OIS consists in the optical and optoelectronic investigations of group IV semiconductor materials (for silicon photonics) and other semiconductor structures (e.g. group III-V nanostructures), which emit light in the near infrared up to a wavelength of around 1650 nm .
FWF stand-alone project: Silicon Color Centers: Vertical position control and electrical driving of Si telecom quantum light emitters