Short Description
The Optical Infrared Setup (OIS) enables the spectroscopic investigation of the optical response (luminescence) of semiconductor materials and corresponding micro- or nanostructures. At its core, the OIS consists of two separate excitation paths for different wavelength ranges, a cryostat and positioning system for the sample under investigation, and the detection path. For photoluminescence excitation, several fixed-wavelength lasers in the visible range (currently 440, 473, and 650 nm) are available, as well as a tunable picosecond laser system for the telecommunications wavelength range from 1260 nm to 1675 nm. The respective laser light is focused onto the sample using an objective lens. The cryostat and positioning system enables studies at variable sample temperatures ranging from 4.2 Kelvin to 500 Kelvin and provides a positioning accuracy of < 250 nm. The luminescence signal is collected via the same objective lens and directed into the detection path. The wavelength range detectable in the OIS generally extends from 800 nm to 1700 nm, although the setup is optimized for the telecommunications wavelength range. The light emitted by the sample is spectrally split by a grating spectrometer and directed to a liquid nitrogen-cooled InGaAs line detector, which records the spectra. For time-resolved and time-correlated measurements, the detection path also provides a fiber-optic link to a single-photon detection system.
Contact Person
Moritz Brehm
Research Services
Photoluminescence measurements of telecom light emitters.
In case of interest, please contact: moritz.brehm@jku.at first
Methods & Expertise for Research Infrastructure
With the help of the optical infrared setup, mainly semiconductors and semiconductor nanostructures are examined with regard to their light-emission properties (photoluminescence and electroluminescence). The existing expertise of the supervisors of the OIS consists in the optical and optoelectronic investigations of group IV semiconductor materials (for silicon photonics) and other semiconductor structures (e.g. group III-V nanostructures), which emit light in the near infrared up to a wavelength of around 1650 nm .
FWF stand-alone project: Silicon Color Centers: Vertical position control and electrical driving of Si telecom quantum light emitters
FWF CoE "Quantum Science Austria" Discovery project: Deterministic integration of silicon color centers as scalable key resources for telecom quantum networks
FFG "Quantum Austria" project: Vanadium in silicon carbide electronic and photonic enhancement structures for qudit quantum computings